SELF-ALIGNED ALGAAS/GAAS HBT WITH INGAAS EMITTER CAP LAYER

被引：12

作者：

NAGATA, K

NAKAJIMA, O

NITTONO, T

ITO, H

ISHIBASHI, T

机构：

[1] NTT Electrical Communication Lab, Kanagawa, JPN, NTT Electrical Communication Lab, Kanagawa, JPN

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 02期

关键词：

SEMICONDUCTING GALLIUM ARSENIDE - SEMICONDUCTOR DEVICES - Junctions;

D O I：

10.1049/el:19870046

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new self-aligned AlGaAs/GaAs HBT with an InGaAs emitter cap layer is presented. This HBT has nonalloyed ohmic contacts to the emitter and base that are formed simultaneously and in a self-aligned manner. The low emitter contact resistance of 1. 4 multiplied by 10** minus **7 OMEGA cm**2 and the high transconductance per unit area of 3. 3mS/ mu m**2 demonstrate the effectiveness of this structure.

引用

页码：64 / 65

页数：2

共 8 条

[1] GAAS/(GA,AL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH BURIED OXYGEN-IMPLANTED ISOLATION LAYERS [J].

ASBECK, PM ;

MILLER, DL ;

ANDERSON, RJ ;

EISEN, FH .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (08) :310-312

[2]

ASBECK PM, 1984, 1984 IEEE GAAS IC S, P133

[3] GAAS/(GAAL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS USING A SELF-ALIGNED SUBSTITUTIONAL EMITTER PROCESS [J].

CHANG, MF ;

ASBECK, PM ;

MILLER, DL ;

WANG, KC .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (01) :8-10

[4]

NAGATA K, 1986, I PHYS C SER, V79, P589

[5] EXTREMELY LOW RESISTANCE NONALLOYED OHMIC CONTACTS TO N-GAAS USING COMPOSITIONALLY GRADED INXGA1-XAS LAYERS [J].

NITTONO, T ;

ITO, H ;

NAKAJIMA, O ;

ISHIBASHI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (10) :L865-L867

[6]

RAO MA, 1986, 44TH DEV RES C

[7] OHMIC CONTACTS TO NORMAL-GAAS USING GRADED BAND-GAP LAYERS OF GA1-XINXAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

WOODALL, JM ;

FREEOUF, JL ;

PETTIT, GD ;

JACKSON, TN ;

KIRCHNER, P .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :626-627

[8]

Yamauchi Y., 1986, Transactions of the Institute of Electronics and Communication Engineers of Japan, Section E (English), VE69, P286

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