GAS-PHASE NUCLEATION IN AN ATMOSPHERIC-PRESSURE CHEMICAL VAPOR-DEPOSITION PROCESS FOR SIO2-FILMS USING TETRAETHYLORTHOSILICATE (TEOS)

Formation of a SiO2 film on a substrate and generation of particles in the ps phase were examined simultaneously in an atmospheric-pressure chemical vapor deposition (APCVD) process using tetraethylorthosilicate (TEOS). The furnace temperature range where SiO2 films can be prepared without particle generation was found to be 700-740-degrees-C. The particles generated from the APCVD process were spherical, amorphous, and had a diameter smaller than 60 nm. The Fourier transform infrared and thermal desorption spectra showed that the particles contained a small amount of an ethoxy group and a relatively large amount of a hydroxyl group.