IMPORTANT CONSIDERATIONS FOR SEM TOTAL DOSE TESTING

[1] CHADSEY WL, 1973, TR7024C7464 NAD CRAN

[2] SEM IRRADIATION FOR HARDNESS ASSURANCE SCREENING AND PROCESS DEFINITION [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (06) : 387 - 389

[3] DETERMINATION OF KILOVOLT ELECTRON ENERGY DISSIPATION VS PENETRATION DISTANCE IN SOLID MATERIALS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5837 - &

[4] GALLOWAY KF, 1976, NBS40019 SPEC PUBL, P59

[5] Lindner R., 1977, Siemens Forschungs- und Entwicklungsberichte, V6, P39

[6] LIPMAN JA, 1974, IEEE T NUCL SCI, VNS21, P383, DOI 10.1109/TNS.1974.6498957

[7] COMPARISON OF INTERFACE-STATE GENERATION BY 25-KEV ELECTRON-BEAM IRRADIATION IN P-TYPE AND N-TYPE MOS CAPACITORS [J]. APPLIED PHYSICS LETTERS, 1975, 27 (02) : 61 - 63

[8] OXIDE THICKNESS DEPENDENCE OF ELECTRON-INDUCED SURFACE STATES IN MOS STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1975, 27 (11) : 615 - 617

[9] SELECTIVE ELECTRON-BEAM IRRADIATION OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (05) : 2433 - +

[10] DOSE-RATE EFFECTS IN PERMANENT THRESHOLD VOLTAGE SHIFTS OF MOS-TRANSISTORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2214 - 2218

[1] CHADSEY WL, 1973, TR7024C7464 NAD CRAN

[2] SEM IRRADIATION FOR HARDNESS ASSURANCE SCREENING AND PROCESS DEFINITION [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (06) : 387 - 389

[3] DETERMINATION OF KILOVOLT ELECTRON ENERGY DISSIPATION VS PENETRATION DISTANCE IN SOLID MATERIALS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5837 - &

[4] GALLOWAY KF, 1976, NBS40019 SPEC PUBL, P59

[5] Lindner R., 1977, Siemens Forschungs- und Entwicklungsberichte, V6, P39

[6] LIPMAN JA, 1974, IEEE T NUCL SCI, VNS21, P383, DOI 10.1109/TNS.1974.6498957

[7] COMPARISON OF INTERFACE-STATE GENERATION BY 25-KEV ELECTRON-BEAM IRRADIATION IN P-TYPE AND N-TYPE MOS CAPACITORS [J]. APPLIED PHYSICS LETTERS, 1975, 27 (02) : 61 - 63

[8] OXIDE THICKNESS DEPENDENCE OF ELECTRON-INDUCED SURFACE STATES IN MOS STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1975, 27 (11) : 615 - 617

[9] SELECTIVE ELECTRON-BEAM IRRADIATION OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (05) : 2433 - +

[10] DOSE-RATE EFFECTS IN PERMANENT THRESHOLD VOLTAGE SHIFTS OF MOS-TRANSISTORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2214 - 2218