INFRARED LUMINESCENCE AND ENERGY-LEVELS OF DEEP CENTERS IN SILICON-CARBIDE

被引：0

作者：

GORBAN, IS ^{[1
]}

SLOBODYANYUK, AV ^{[1
]}

机构：

[1] TG SHEVCHENKO STATE UNIV,KIEV,UKSSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1976年 / 10卷 / 06期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：668 / 670

页数：3

共 11 条

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[2]

Gorban' I. S., 1974, Soviet Physics - Solid State, V16, P1163

[3]

Gorban' I. S., 1974, Soviet Physics - Solid State, V15, P1925

[4]

GORBAN IS, 1973, FIZ TVERD TELA+, V15, P789

[5]

GORBAN IS, 1974, FIZ TVERD TELA+, V16, P1789

[6]

GORBAN IS, 1973, FIZ TVERD TELA+, V15, P2877

[7]

Hagen S. H., 1974, Journal of Luminescence, V9, P9, DOI 10.1016/0022-2313(74)90066-0

[8] PHOTOLUMINESCENCE OF TI IN 4 SIC POLYTYPES [J].

PATRICK, L ;

CHOYKE, WJ .

PHYSICAL REVIEW B, 1974, 10 (12) :5091-5094

[9] INTERPRETATION OF DEAN AND HARTMANS 6H-SIC MAGNETO-OPTICAL DATA [J].

PATRICK, L .

PHYSICAL REVIEW B, 1973, 7 (04) :1719-1721

PATRICK, L .

PHYSICAL REVIEW B, 1972, 5 (06) :2198-&