LOW-TEMPERATURE ANNEALING BEHAVIOR OF 2 SPECIES (ARGON AND ANTIMONY) IMPLANTED SILICON

被引：3

作者：

SPINELLI, P

BRUEL, M

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 209卷 / MAY期

关键词：

D O I：

10.1016/0167-5087(83)90878-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：751 / 753

页数：3

共 5 条

[1] RECOIL IMPLANTATION OF ANTIMONY IN SILICON [J].

BRUEL, M ;

FLOCCARI, M ;

GAILLIARD, JP .

NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :93-96

[2] NEW TECHNIQUES OF IMPLANTATION FOR NEAR-TERM APPLICATIONS [J].

BRUEL, M ;

FLOCCARI, M ;

LABARTINO, J ;

MICHAUD, JF ;

SOUBIE, A .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1981, 189 (01) :135-140

[3]

MAES H, 1981, IMPURITY DOPING, P558

[4]

MAZUR RG, 1981, SOLID STATE TECHNOL, V24, P64

[5]

SHANNON JM, 1976, I PHYS C SERIES, V28, P37