LOW-TEMPERATURE DOUBLE-PLASMA PROCESS FOR BN FILMS ON SEMICONDUCTORS

被引:10
作者
SCHMOLLA, W
HARTNAGEL, HL
机构
关键词
D O I
10.1149/1.2123636
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:2636 / 2637
页数:2
相关论文
共 4 条
[1]   CHEMICAL-DEPOSITION OF BORON-NITROGEN FILMS [J].
ADAMS, AC ;
CAPIO, CD .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) :399-405
[2]   GLOW DISCHARGE FORMATION OF SILICON OXIDE AND DEPOSITION OF SILICON OXIDE THIN FILM CAPACITORS BY GLOW DISCHARGE TECHNIQUES [J].
ING, SW ;
DAVERN, W .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (03) :284-&
[3]  
NEUBERGER M, 1971, HDB ELECTRONIC MATER, V2
[4]  
RENZ H, 1980, ELECTRON LETT, V16