SPATIAL DISORDER DEPENDENCE OF THE CONDUCTANCE OF A RANDOM RESISTOR NETWORK

We calculate the resistance of one-, two-, and three-dimensional localized systems in the hopping regime, simulated by random-resistor networks within the r-resistor model. The analysis of the logarithm of the resistance as a function of the degree of spatial disorder reveals that in one- and two-dimensional samples the resistance increases with disorder, while in three-dimensional samples the resistance decreases. We also study the fluctuations of the conductance from sample to sample. © 1994 The American Physical Society.