SPATIAL DISORDER DEPENDENCE OF THE CONDUCTANCE OF A RANDOM RESISTOR NETWORK

被引：3
作者：
EGEAGUILLEN, A
ORTUNO, M
GARCIAMOLINA, R
机构：
[1] Departamento de Física, Universidad de Murcia, E-30080 Murcia
来源：
PHYSICAL REVIEW B | 1994年 / 50卷 / 17期
关键词：
D O I：
10.1103/PhysRevB.50.12520
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We calculate the resistance of one-, two-, and three-dimensional localized systems in the hopping regime, simulated by random-resistor networks within the r-resistor model. The analysis of the logarithm of the resistance as a function of the degree of spatial disorder reveals that in one- and two-dimensional samples the resistance increases with disorder, while in three-dimensional samples the resistance decreases. We also study the fluctuations of the conductance from sample to sample. © 1994 The American Physical Society.
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页码：12520 / 12523
页数：4
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