HIGH-SPEED LOGIC LSI USING DIFFUSION SELF-ALIGNED ENHANCEMENT DEPLETION MOS IC

被引：15

作者：

OHTA, K

MORIMOTO, M

SAITOH, M

FUKUDA, T

MORINO, A

SHIMIZU, K

HAYASHI, Y

TARUI, Y

机构：

[1] ELECTROTECH LAB,TOKYO,JAPAN

[2] NIPPON ELECT CO LTD,IC DIV,FUNDAMENTAL TECHNOL SECT,TOKYO,JAPAN

[3] NIPPON ELECT CO LTD,IC DIV,IST IC DESIGN ENGN DEPT,TOKYO,JAPAN

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1975年 / 10卷 / 05期

关键词：

D O I：

10.1109/JSSC.1975.1050617

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：314 / 321

页数：8

共 9 条

[1]

CAUGE TT, 1970, DEC INT EL DEV M

[2] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J].

DENNARD, RH ;

GAENSSLEN, FH ;

YU, HN ;

RIDEOUT, VL ;

BASSOUS, E ;

LEBLANC, AR .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) :256-268

[3]

LIN HC, 1973, IEEE T ELECTRON DEV, VED20, P275

[4] VMOS - HIGH-SPEED TTL COMPATIBLE MOS LOGIC [J].

RODGERS, TJ ;

MEINDL, JD .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) :239-250

[5]

RODGERS TJ, 1975, FEB INT SOL STAT CIR, P122

[6]

TARUI Y, 1970, DEC INT EL DEV M

[7]

TARUI Y, 1970, MIKROELTRONIK, V4, P102

[8]

TARUI Y, 1970, 2ND P C SOL STAT DEV, V40, P193

[9]

TROYE NCD, 1974, FEB INT SOL STAT CIR, P12

← 1 →