STRUCTURAL IMPERFECTIONS IN SILICON DIOXIDE FILMS IDENTIFIED WITH VACUUM ULTRAVIOLET OPTICAL-ABSORPTION MEASUREMENTS

被引：11

作者：

AWAZU, K

KAWAZOE, H

SAITO, Y

WATANABE, K

ANDO, T

机构：

[1] TOKYO INST TECHNOL,ENGN MAT RES LAB,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN

[2] RES LAB NUCL REACTORS,MEGURO KU,TOKYO 152,JAPAN

[3] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 05期

关键词：

D O I：

10.1063/1.105428

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical absorption of silicon dioxide films fabricated by dry oxidation at 1000 or 1100-degrees-C was studied by measurements in the vacuum ultraviolet region. Two clear absorption bands at 7.6 and 6.7 eV were found for the films. Intensities of the bands decreased following heat treatment in a H-2 ambient. The absorption band at 7.6 eV is considered to be caused by the defect having the structure of 3O = SiSi = O3. The concentration of the 3O = SiSi = O3 structure was estimated to be 6 X 10(19) cm-3 and 5 X 10(18) cm-3 for the films fabricated at 1000 and 1100-degrees-C, respectively.

引用

页码：528 / 530

页数：3

共 11 条

[1] O-2 MOLECULES DISSOLVED IN SYNTHETIC SILICA GLASSES AND THEIR PHOTOCHEMICAL-REACTIONS INDUCED BY ARF EXCIMER LASER-RADIATION [J].