COMMUTATING SOA CAPABILITY OF POWER DMOS FETS

被引：6

作者：

TSUI, AC

YILMAZ, H

HSHIEH, FI

CHANG, M

FORTIER, T

机构：

[1] Siliconix Inc., Santa Clar, CA 95054

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 1994年 / 9卷 / 02期

关键词：

D O I：

10.1109/63.286806

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The commutating safe operating area (CSOA) of DMOS FET's is determined by the peak reverse-recovery current and the peak reapplied voltage. Both contribute to the triggering of localized turn-on of the built-in bipolar junction transistor (BJT). New DMOS FET's with lower bipolar gain and shorter minority-carrier lifetime have doubled the CSOA capability.

引用

页码：141 / 145

页数：5