CHARACTERIZATION OF EPITAXIAL IN0.75GA0.25AS0.56P0.44 LAYERS ON INP GROWN BY LIQUID-PHASE EPITAXY

被引:10
作者
SU, YK
WU, MC
CHENG, KY
CHANG, CY
机构
关键词
D O I
10.1016/0022-0248(84)90040-X
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:477 / 482
页数:6
相关论文
共 50 条
[41]   2-PHASE LIQUID-PHASE EPITAXY OF IN0.53GA0.47AS ON INP [J].
CHEN, MK ;
LIN, HH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (04) :1209-1213
[42]   AMPHOTERIC BEHAVIOR OF GERMANIUM IN IN0.5GA0.5P GROWN BY LIQUID-PHASE EPITAXY [J].
LEE, JB ;
KIM, I ;
KWON, HK ;
CHOE, BD .
APPLIED PHYSICS LETTERS, 1993, 62 (14) :1620-1622
[43]   LIQUID-PHASE EPITAXY AND PHOTOLUMINESCENCE CHARACTERIZATION OF P-TYPE GASB LAYERS GROWN FROM BI BASED MELTS [J].
GLADKOV, P ;
MONOVA, E ;
WEBER, J .
JOURNAL OF CRYSTAL GROWTH, 1995, 146 (1-4) :319-325
[44]   INVESTIGATION OF DOPING LEVEL IN OVERCOMPENSATED P-GAP LAYERS GROWN BY LIQUID-PHASE EPITAXY [J].
PFEIFER, J ;
CSONTOS, L ;
SZENTPALI, B .
ACTA PHYSICA ACADEMIAE SCIENTIARUM HUNGARICAE, 1978, 44 (01) :29-42
[45]   ACTIVATION RATIO OF FE IN FE-DOPED SEMIINSULATING INP EPITAXIAL LAYERS GROWN BY LIQUID-PHASE EPITAXY AND METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
SUGAWARA, M ;
KONDO, M ;
NAKAI, K ;
YAMAGUCHI, A ;
NAKAJIMA, K .
APPLIED PHYSICS LETTERS, 1987, 50 (20) :1432-1434
[46]   Nitrogen incorporation into GaAsN and InGaAsN layers grown by liquid-phase epitaxy [J].
Milanova, Malina ;
Vitanov, Petko ;
Terziyska, Penka ;
Koleva, Greta ;
Popov, Georgy .
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 4, 2013, 10 (04) :597-600
[47]   THIN SINGLE CRYSTALLINE PHOSPHOR LAYERS GROWN BY LIQUID-PHASE EPITAXY [J].
ROBERTSON, JM ;
VANTOL, MW ;
HEYNEN, JPH ;
SMITS, WH ;
DEBOER, T .
PHILIPS JOURNAL OF RESEARCH, 1980, 35 (06) :354-371
[48]   INVESTIGATION OF ERBIUM DOPING OF INGAASP LAYERS GROWN BY LIQUID-PHASE EPITAXY [J].
WU, MC ;
CHEN, EH ;
CHIU, CM .
JOURNAL OF APPLIED PHYSICS, 1993, 73 (07) :3482-3485
[49]   Transport property of In0.5Ga0.5P layers grown by liquid phase epitaxy [J].
Yoon, IT ;
Oh, SJ ;
Park, HL .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (03) :1527-1530
[50]   ISOVALENT GALLIUM AND ARSENIC IMPURITY DOPING OF INP GROWN BY LIQUID-PHASE EPITAXY [J].
PYSHNAYA, NB ;
RADAUTSAN, SI ;
CHUMAK, VA ;
CHALDYSHEV, VV ;
SHMARTSEV, YV .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (10) :972-974