CHARACTERIZATION OF EPITAXIAL IN0.75GA0.25AS0.56P0.44 LAYERS ON INP GROWN BY LIQUID-PHASE EPITAXY

被引：10
作者：
SU, YK
WU, MC
CHENG, KY
CHANG, CY
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1984年 / 67卷 / 03期
关键词：
D O I：
10.1016/0022-0248(84)90040-X
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：477 / 482
页数：6
相关论文
共 50 条
  • [31] Formation of InGaAs layers onto InP substrates by liquid-phase epitaxy
    Syrbu, NN
    Dorogan, VV
    Cretu, RV
    OPTICS COMMUNICATIONS, 1996, 132 (5-6) : 449 - 451
  • [32] HIGH-PURITY INP AND INGAASP GROWN BY LIQUID-PHASE EPITAXY
    COOK, LW
    TASHIMA, MM
    TABATABAIE, N
    LOW, TS
    STILLMAN, GE
    JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 475 - 484
  • [33] EFFICIENT ELECTROLUMINESCENCE FROM INP DIODES GROWN BY LIQUID-PHASE EPITAXY
    BLOM, GM
    WOODALL, JM
    APPLIED PHYSICS LETTERS, 1970, 17 (09) : 373 - &
  • [34] Formation of InGaAs layers onto InP substrates by liquid-phase epitaxy
    Technical Univ of Moldova, Kishinau, Moldova
    Opt Commun, 5-6 (449-451):
  • [35] SPECIFIC STRUCTURAL FEATURES OF GAAS EPITAXIAL LAYERS GROWN BY THE LIQUID-PHASE EPITAXY ON SI(111) SUBSTRATES
    ABRAMOV, AV
    DERYAGIN, NG
    MILVIDSKII, MG
    TRETYAKOV, DN
    YUGOVA, TG
    KRISTALLOGRAFIYA, 1995, 40 (05): : 906 - 912
  • [36] Bond length variation in In0.25Ga0.75As/InP epitaxial layers thicker than the critical thickness
    Tormen, M
    De Salvador, D
    Natali, M
    Drigo, A
    Romanato, F
    Rossetto, G
    Boscherini, F
    Mobilio, S
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (05) : 2533 - 2539
  • [37] ANOMALY IN THE GA-SI PHASE-DIAGRAM - NONRETROGRADE SOLUBILITY OF GA IN SI LAYERS GROWN BY LIQUID-PHASE EPITAXY
    LINNEBACH, RN
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (11) : 6794 - 6797
  • [38] GROWTH OF INGAP EPITAXIAL LAYERS BY LIQUID-PHASE ELECTRO-EPITAXY
    YANAGASE, M
    TANAKA, S
    HIRAMATSU, K
    AKASAKI, I
    JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) : 304 - 308
  • [39] DIFFUSION LENGTH AND LIFETIME IN HIGHLY GA-DOPED PBSNTE LAYERS GROWN BY LIQUID-PHASE EPITAXY
    SHAHAR, A
    FEIT, Z
    ZUSSMAN, A
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (06) : 2455 - 2457
  • [40] TELLURIUM AND ZINC DOPING IN IN0.5GA0.5P GROWN BY LIQUID-PHASE EPITAXY
    WU, MC
    SU, YK
    CHANG, CY
    CHENG, KY
    JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) : 4317 - 4321
12345