MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY

被引：410
作者：
LANG, DV
COHEN, JD
HARBISON, JP
机构：
来源：
PHYSICAL REVIEW B | 1982年 / 25卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.25.5285
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：5285 / 5320
页数：36
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