MESOPLASMA BREAKDOWN IN SILICON JUNCTIONS

被引:23
作者
ENGLISH, AC
POWER, HM
机构
关键词
D O I
10.1109/PROC.1963.1890
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:500 / +
页数:1
相关论文
共 7 条
[1]   UNIFORM SILICON P-N JUNCTIONS .1. BROAD AREA BREAKDOWN [J].
BATDORF, RL ;
CHYNOWETH, AG ;
DACEY, GC ;
FOY, PW .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (07) :1153-1160
[2]   CREEP AND FORMING IN SELENIUM RECTIFIERS [J].
ENGLISH, AC ;
THOMAS, RW .
SOLID-STATE ELECTRONICS, 1960, 1 (03) :245-249
[3]  
ENGLISH AC, 1960, COMMUN ELECTRON, V79, P9
[4]  
Ioffe A. F., 1960, PROGRESSES SEMICONDU, V4, P237
[5]   MICROPLASMAS IN SILICON [J].
ROSE, DJ .
PHYSICAL REVIEW, 1957, 105 (02) :413-418
[6]  
Schafft H., 1962, IRE T ELECTRON DEV, V9, P129
[7]  
THORNTON CG, 1958, IRE T ELECTRON DEV, VED5, P6