ELECTRON-CONFINED LO PHONON-SCATTERING RATES IN GAAS/ALAS QUANTUM-WELLS IN THE PRESENCE OF A QUANTIZING MAGNETIC-FIELD

被引：10

作者：

BHAT, JS ^{[1
]}

MULIMANI, BG ^{[1
]}

KUBAKADDI, SS ^{[1
]}

机构：

[1] KARNATAK UNIV,DEPT PHYS,DHARWAR 580003,KARNATAKA,INDIA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 08期

关键词：

D O I：

10.1088/0268-1242/8/8/014

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An expression for the electron-LO phonon scattering rates, in the Huang and Zhu approximation for the confined LO phonon modes, is obtained in quantum wells in the presence of a magnetic field. Numerical results for the intrasubband scattering rates are given for GaAs/AlAs quantum wells as a function of magnetic field and well width. These results are compared with the corresponding calculations for bulk phonons, the Fuchs-Kliewer slab model and Ridley's guided-mode model.

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收藏

页码：1571 / 1574

页数：4

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