THE DENSITY OF STATES IN UNDOPED AND DOPED AMORPHOUS HYDROGENATED SILICON

被引：45
作者：
KOCKA, J
机构：
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1987年 / 90卷 / 1-3期
关键词：
D O I：
10.1016/S0022-3093(87)80389-7
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
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页码：91 / 98
页数：8
相关论文
共 27 条
[1]   ELECTRONIC CORRELATIONS AND TRANSIENT EFFECTS IN DISORDERED-SYSTEMS [J].
ADLER, D .
SOLAR ENERGY MATERIALS, 1982, 8 (1-3) :53-69
[2]  
ADLER D, 1984, AIP C P, V120, P70
[3]  
AMER NM, 1984, SEMICONDUCT SEMIMET, V21, P83
[4]   DETERMINATION OF MIDGAP DENSITY OF STATES IN A-SI-H USING SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS [J].
DENBOER, W .
JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :451-454
[5]   ELECTRON-SPIN RESONANCE OF DOPED GLOW-DISCHARGE AMORPHOUS-SILICON [J].
DERSCH, H ;
STUKE, J ;
BEICHLER, J .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 105 (01) :265-274
[6]   SUB-GAP AND BAND EDGE OPTICAL-ABSORPTION IN A-SI-H BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY [J].
JACKSON, WB ;
AMER, NM .
JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :293-296
[7]   DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY [J].
JACKSON, WB ;
AMER, NM .
PHYSICAL REVIEW B, 1982, 25 (08) :5559-5562
[8]   ENERGY-DEPENDENCE OF THE OPTICAL MATRIX ELEMENT IN HYDROGENATED AMORPHOUS AND CRYSTALLINE SILICON [J].
JACKSON, WB ;
KELSO, SM ;
TSAI, CC ;
ALLEN, JW ;
OH, SJ .
PHYSICAL REVIEW B, 1985, 31 (08) :5187-5198
[9]   COMPARISON OF THE DENSITY OF GAP STATES IN A-SI-H FOUND BY DIFFERENT METHODS [J].
KOCKA, J ;
VANECEK, M ;
KOZISEK, Z ;
STIKA, O ;
BEICHLER, J .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :293-296
[10]  
KOCKA J, UNPUB
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