IDENTIFICATION OF HOT-SPOTS IN INTEGRATED-CIRCUITS BY LASER SCANNING MICROSCOPY

被引：1
作者：
BERGNER, H
KRAUSE, A
STAMM, U
机构：
[1] Faculty of Physics and Astronomy, Friedrich Schiller University Jena, O- 6900 Jena
来源：
MICROELECTRONIC ENGINEERING | 1991年 / 14卷 / 02期
关键词：
THERMAL MAPPING OF ICS; FAILURE ANALYSIS; IR LASER SCANNING MICROSCOPY; OPTICAL BEAM INDUCED CURRENT (OBIC);
D O I：
10.1016/0167-9317(91)90159-B
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel method is demonstrated which allows localization and clear identification of hot spots in integrated circuits with high spatial resolution. The method is based on the optical beam induced current technique (OBIC) using a laser scanning microscope with infrared illumination. Due to the OBIC contrast, thermal defects can be recognized in a difference image of two OBIC images taken at different background temperatures of the circuit. The method is applied to thermal mapping of a CMOS NOR-gate. Calibrating the OBIC signal in dependence on the circuit temperature, the absolute temperature of the hot spot is determined.
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收藏
页码：121 / 131
页数：11
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