OXIDE FORMATION DURING PLASMA-ETCHING OF SILICON-CONTAINING RESISTS

被引：26

作者：

HARTNEY, MA ^{[1
]}

CHIANG, JN ^{[1
]}

HESS, DW ^{[1
]}

SOANE, DS ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT CHEM ENGN,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 16期

关键词：

D O I：

10.1063/1.101337

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1510 / 1512

页数：3

共 18 条

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