ANNEALING MECHANISMS IN NEUTRON-IRRADIATED SILICON

被引：1

|

作者：

THALER, SL

CHANDRASEKHAR, HR

CHANDRASEKHAR, M

MEESE, JM

机构：

[1] UNIV MISSOURI,DEPT PHYS,COLUMBIA,MO 65211

[2] UNIV MISSOURI,RES REACTOR FACIL,COLUMBIA,MO 65211

来源：

PHYSICA B & C | 1983年 / 119卷 / 03期

关键词：

D O I：

10.1016/0378-4363(83)90046-3

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：325 / 329

页数：5

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