PHOTOLUMINESCENCE STUDIES OF VACANCIES AND VACANCY-IMPURITY COMPLEXES IN ANNEALED GAAS

被引：66

作者：

CHIANG, SY ^{[1
]}

PEARSON, GL ^{[1
]}

机构：

[1] STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

JOURNAL OF LUMINESCENCE | 1975年 / 10卷 / 05期

关键词：

D O I：

10.1016/0022-2313(75)90054-X

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：313 / 322

页数：10

共 12 条

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CHIANG, SY ;

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[6] EVIDENCE FOR LUMINESCENCE INVOLVING ARSENIC VACANCY-ACCEPTOR CENTERS IN P-TYPE GAAS [J].

HWANG, CJ .

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[7] EFFECT OF HEAT TREATMENT ON 1.370 EV PHOTOLUMINESCENCE EMISSION BAND IN ZN-DOPED GAAS [J].

HWANG, CJ .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) :4307-&

[8] NEW DEEP-LEVEL LUMINESCENCE IN GAAS - SN [J].

KRESSEL, H ;

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HAWRYLO, FZ .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) :5647-&

[9] PHOTOLUMINESCENCE OF DONOR DOPED GAAS DIFFUSED WITH COPPER [J].

NAKASHIMA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (12) :1737-+

[10] PHOTOLUMINESCENCE OF CU-DOPED GALLIUM ARSENIDE [J].

QUEISSER, HJ ;

FULLER, CS .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (13) :4895-&

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