ICE DEPOSITION AND EPITAXIAL-GROWTH OF GAAS THIN-FILMS

被引：8
|
作者：
SHINOHARA, M [1 ]
OHTANI, F [1 ]
ISHIYAMA, O [1 ]
ASARI, M [1 ]
SARAIE, J [1 ]
机构：
[1] KYOTO INST TECHNOL,FAC ENGN & DESIGN,DEPT ELECTR & INFORMAT SCI,KYOTO 606,JAPAN
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1995年 / 99卷 / 1-4期
关键词：
D O I：
10.1016/0168-583X(94)00640-7
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The hetero- and homoepitaxial deposition of GaAs films by the ionized cluster beam technique in connection with subsequent neutral beam deposition forming a double layer structure have been studied. It is found that ICE-deposited films have superior quality in comparison with conventional ion beam deposited films and comparable quality like MBE or MOCVD-deposited films. By the fabrication of device structures, it has been proved that the start of film growth from an interface formed by an ICE-deposited As layer is advantageous. Additionally, surface cleaning by low-energy ionized cluster beams has been studied. For the first time, defect-free surface cleaning by low-energy cluster ion beams has been realized.
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页码：576 / 579
页数：4
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