SOLID-II - HIGH-VOLTAGE HIGH-GAIN KILO-ANGSTROM-CHANNEL-LENGTH CMOSFETS USING SILICIDE WITH SELF-ALIGNED ULTRASHALLOW (3S) JUNCTION

被引：19
作者：
HORIUCHI, M
YAMAGUCHI, K
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 02期
关键词：
D O I：
10.1109/T-ED.1986.22476
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：260 / 269
页数：10
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