MONOLITHIC GA1-XINX AS MESA LASERS WITH GROWN OPTICAL FACETS

被引：8

作者：

BLUM, FA ^{[1
]}

LAWLEY, KL ^{[1
]}

HOLTON, WC ^{[1
]}

机构：

[1] TEXAS INSTR INC,DALLAS,TX 75080

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 06期

关键词：

D O I：

10.1063/1.321937

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2605 / 2611

页数：7

共 13 条

[1]

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[2]

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[5] HIGH-RADIANCE ROOM-TEMPERATURE GAAS LASER WITH CONTROLLED RADIATION IN A SINGLE TRANSVERSE MODE [J].

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[7]

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[8] DISTRIBUTED-FEEDBACK SINGLE HETEROJUNCTION GAAS DIODE LASER [J].

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STREIFER, W .

APPLIED PHYSICS LETTERS, 1974, 25 (04) :203-206

[9] SELECTIVE EPITAXIAL DEPOSITION OF GALLIUM ARSENIDE IN HOLES [J].

SHAW, DW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (09) :904-&

[10] EFFECTS OF VAPOR COMPOSITION ON GROWTH RATES OF FACETED GALLIUM ARSENIDE HOLE DEPOSITS [J].

SHAW, DW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) :777-&

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