GAS SENSOR BASED ON A TRANSISTOR STRUCTURE

被引：11

作者：

ABDULLAYEV, AG

EVDOKIMOV, AV

MURSHUDLY, MN

SCHEGLOV, MI

机构：

[1] Acad of Sciences of the Azerbaijan, SSR, Baku, USSR, Acad of Sciences of the Azerbaijan SSR, Baku, USSR

来源：

SENSORS AND ACTUATORS | 1987年 / 11卷 / 04期

关键词：

AVALANCHE CHARGE MULTIPLICATION - DETECTION LIMIT - OSCILLATION FREQUENCY;

D O I：

10.1016/0250-6874(87)80074-4

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：339 / 347

页数：9

共 9 条

[1] PD-THIN-SIO2-SI DIODE .1. ISOTHERMAL VARIATION OF H2-INDUCED INTERFACIAL TRAPPING STATES [J].

KERAMATI, B ;

ZEMEL, JN .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1091-1099

[2] HYDROGEN-SENSITIVE MOS FIELD-EFFECT TRANSISTOR [J].

LUNDSTROEM, I ;

SHIVARAMAN, S ;

SVENSSON, C ;

LUNDKVIST, L .

APPLIED PHYSICS LETTERS, 1975, 26 (02) :55-57

[3] LARGE-SIGNAL TRANSIENT RESPONSE OF JUNCTION TRANSISTORS [J].

MOLL, JL .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (12) :1773-1784

[4] TRANSITION METAL-GATE MOS GASEOUS DETECTORS [J].

POTEAT, TL ;

LALEVIC, B .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (01) :123-129

[5]

RZHANOV AV, 1971, ELECTRON PROCESSES S, P91

[6] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].

SHOCKLEY, W ;

READ, WT .

PHYSICAL REVIEW, 1952, 87 (05) :835-842

[7]

SPIRIDONOV NS, 1975, BASIS TRANSISTORS TH, P256

[8]

STENBERG M, 1984, SENSOR ACTUATOR, V4, P273

[9]

VOLKENSTEIN FF, 1973, PHYSICAL CHEM SEMICO, P64

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