HYDROGEN-ACCEPTOR INTERACTION IN CDTE AND ZNTE STUDIES BY PHOTOLUMINESCENCE

被引：38

作者：

SVOB, L

MARFAING, Y

机构：

来源：

SOLID STATE COMMUNICATIONS | 1986年 / 58卷 / 06期

关键词：

D O I：

10.1016/0038-1098(86)90801-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：343 / 346

页数：4

共 6 条

[1] PROPERTIES OF NITROGEN ACCEPTOR IN CDTE - ENERGY-SPECTRUM AND INTERACTION WITH HYDROGEN [J].

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LEGROS, R ;

SVOB, L ;

MARFAING, Y .

JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) :226-231

[2] DONOR NEUTRALIZATION IN GAAS(SI) BY ATOMIC-HYDROGEN [J].

CHEVALLIER, J ;

DAUTREMONTSMITH, WC ;

TU, CW ;

PEARTON, SJ .

APPLIED PHYSICS LETTERS, 1985, 47 (02) :108-110

[3]

GIBBONS JF, 1975, PROJECTED RANGE STAT

[4] NEUTRALIZATION OF SHALLOW ACCEPTOR LEVELS IN SILICON BY ATOMIC-HYDROGEN [J].

PANKOVE, JI ;

CARLSON, DE ;

BERKEYHEISER, JE ;

WANCE, RO .

PHYSICAL REVIEW LETTERS, 1983, 51 (24) :2224-2225

[5] HYDROGEN LOCALIZATION NEAR BORON IN SILICON [J].

PANKOVE, JI ;

ZANZUCCHI, PJ ;

MAGEE, CW ;

LUCOVSKY, G .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :421-423

[6] NEUTRALIZATION OF ACCEPTORS IN SILICON BY ATOMIC-HYDROGEN [J].

PANKOVE, JI ;

WANCE, RO ;

BERKEYHEISER, JE .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1100-1102

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