BREAKDOWN OF CRYSTALLINITY IN LOW-TEMPERATURE-GROWN GAAS-LAYERS

被引：106

作者：

LILIENTALWEBER, Z ^{[1
]}

SWIDER, W ^{[1
]}

YU, KM ^{[1
]}

KORTRIGHT, J ^{[1
]}

SMITH, FW ^{[1
]}

CALAWA, AR ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 19期

关键词：

D O I：

10.1063/1.104990

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A systematic study of the change in structural quality of as-grown GaAs layers deposited at temperatures between 180 and 210-degrees-C by molecular beam epitaxy was performed using transmission electron microscopy, double-crystal x-ray rocking curves, and particle-induced x-ray emission. We found that the crystal quality was correlated strongly with growth temperature near 200-degrees-C. The lattice parameter and the amount of As incorporated in the layer were observed to increase at lower growth temperatures. After exceeding a certain growth-temperature-dependent layer thickness, large densities of pyramidal-type defects are formed, which at lowest growth temperature result in the breakdown of crystallinity and in columnar polycrystalline growth. The lattice expansion is ascribed to the excess As in the layers. The mechanisms of breakdown of crystallinity are discussed.

引用

页码：2153 / 2155

页数：3

共 11 条

[1] LIMITED THICKNESS EPITAXY IN GAAS MOLECULAR-BEAM EPITAXY NEAR 200-DEGREES-C [J].