WATSON-SPHERE-TERMINATED MODEL APPLIED TO THE AUO AND PT- SUBSTITUTIONAL IMPURITIES IN SILICON

被引：20
作者：
ALVES, JLA [1 ]
LEITE, JR [1 ]
机构：
[1] UNIV SAO PAULO,INST FIS,BR-01498 SAO PAULO,SP,BRAZIL
来源：
PHYSICAL REVIEW B | 1984年 / 30卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.30.7284
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：7284 / 7286
页数：3
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