WATSON-SPHERE-TERMINATED MODEL APPLIED TO THE AUO AND PT- SUBSTITUTIONAL IMPURITIES IN SILICON

被引：20
作者：
ALVES, JLA [1 ]
LEITE, JR [1 ]
机构：
[1] UNIV SAO PAULO,INST FIS,BR-01498 SAO PAULO,SP,BRAZIL
来源：
PHYSICAL REVIEW B | 1984年 / 30卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.30.7284
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：7284 / 7286
页数：3
相关论文
共 27 条
  • [1] ELECTRICAL OBSERVATION OF THE AU-FE COMPLEX IN SILICON
    BROTHERTON, SD
    BRADLEY, P
    GILL, A
    WEBER, ER
    [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) : 952 - 956
  • [2] CALADS MJ, 1982, PHYS REV B, V25, P2603
  • [3] ELECTRONIC-STRUCTURE OF OXYGEN IN SILICON
    CALDAS, MJ
    LEITE, JR
    FAZZIO, A
    [J]. PHYSICA B & C, 1983, 116 (1-3): : 106 - 111
  • [4] CARTLING BG, 1975, J PHYS C SOLID STATE, V8, P3183, DOI 10.1088/0022-3719/8/19/018
  • [5] ENERGY-LEVELS IN SILICON
    CHEN, JW
    MILNES, AG
    [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1980, 10 : 157 - 228
  • [6] FAZZIO A, 1979, J PHYS C SOLID STATE, V12, P513, DOI 10.1088/0022-3719/12/3/018
  • [7] A MOLECULAR CLUSTER STUDY OF COMPLEX DEFECTS IN SI - THE DIVACANCY AND THE E-CENTER
    FAZZIO, A
    LEITE, JR
    CALDAS, MJ
    [J]. PHYSICA B & C, 1983, 116 (1-3): : 90 - 94
  • [8] ELECTRONIC-STRUCTURE OF CU, NI, CO, AND FE SUBSTITUTIONAL IMPURITIES IN GALLIUM-ARSENIDE
    FAZZIO, A
    LEITE, JR
    [J]. PHYSICAL REVIEW B, 1980, 21 (10): : 4710 - 4720
  • [9] FAZZIO A, 1979, INT J QUANTUM CHEM, V13, P349
  • [10] ELECTRONIC-STRUCTURE CALCULATION OF V2+O2 COMPLEXES IN SILICON
    GOMES, VMS
    ASSALI, LVC
    LEITE, JR
    CALDAS, MJ
    FAZZIO, A
    [J]. SOLID STATE COMMUNICATIONS, 1984, 49 (06) : 537 - 539
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