WATSON-SPHERE-TERMINATED MODEL APPLIED TO THE AUO AND PT- SUBSTITUTIONAL IMPURITIES IN SILICON

被引：20

作者：

ALVES, JLA ^{[1
]}

LEITE, JR ^{[1
]}

机构：

[1] UNIV SAO PAULO,INST FIS,BR-01498 SAO PAULO,SP,BRAZIL

来源：

PHYSICAL REVIEW B | 1984年 / 30卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.30.7284

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7284 / 7286

页数：3

共 27 条

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