MISFIT DISLOCATIONS AND CRITICAL THICKNESS OF HETEROEPITAXY

被引:83
作者
HU, SM
机构
[1] IBM General Technology Division, Hopewell Junction
关键词
D O I
10.1063/1.347476
中图分类号
O59 [应用物理学];
学科分类号
摘要
An expression is derived for the critical thickness of heteroepitaxial films by taking the energy minimization approach. It is exactly identical to the critical thickness obtained by Matthew and Blakeslee [J. Cryst. Growth 27, 118 (1974)] using a force balance approach, after allowing for a discrepancy judged to be an unmentioned approximation in the latter. The equivalence of the two formulations is explained conceptually. The reason is pointed out for the very different critical thickness obtained by People and Bean [Appl. Phys. Lett. 47, 322 (1985); 49, 229 (1986)] using the energy minimization approach. It is further shown that misfit dislocations do not appear en masse catastrophically when the critical thickness is reached. Rather, their density increases gradually with the epitaxial thickness, approaching only asymptotically a value required for a complete relief of film stress as the thickness tends to infinity. Any observed sudden mass appearance of misfit dislocations must be attributed to a substantial supercritical thickness actually existing, prior to nucleation of dislocations.
引用
收藏
页码:7901 / 7903
页数:3
相关论文
共 23 条
  • [1] DODSON BWW, 1986, SEMICONDUCTOR BASED, P21
  • [2] ESHELBY JD, 1979, DISLOCATIONS SOLIDS, V1, pCH3
  • [3] ONE-DIMENSIONAL DISLOCATIONS .2. MISFITTING MONOLAYERS AND ORIENTED OVERGROWTH
    FRANK, FC
    VANDERMERWE, JH
    [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 198 (1053): : 216 - 225
  • [4] FRANK FC, 1949, P R SOC LONDON A, V198, P2025
  • [5] FRIEDEL J, 1967, DISLOCATIONS, P22
  • [6] RELAXATION OF COHERENT STRAIN IN SI1-XGEX/SI SUPERLATTICES AND ALLOYS
    HAUENSTEIN, RJ
    MILES, RH
    CROKE, ET
    MCGILL, TC
    [J]. THIN SOLID FILMS, 1989, 183 : 79 - 86
  • [7] HIRTH JP, 1968, THEORY DISLOCATIONS, pCH3
  • [8] SURFACE ENERGY OF GERMANIUM AND SILICON
    JACCODINE, RJ
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) : 524 - 527
  • [9] VARIATION OF DISLOCATION MORPHOLOGY WITH STRAIN IN GEXSI1-X EPILAYERS ON (100)SI
    KVAM, EP
    MAHER, DM
    HUMPHREYS, CJ
    [J]. JOURNAL OF MATERIALS RESEARCH, 1990, 5 (09) : 1900 - 1907
  • [10] LARDNER RW, 1974, MATH THEORY DISLOCAT, P93