LOCALIZED STATES IN GAP OF AMORPHOUS-SEMICONDUCTORS

被引：123

作者：

OVSHINSKY, SR ^{[1
]}

机构：

[1] ENERGY CONVERSION DEVICES INC,TROY,MI 48084

来源：

PHYSICAL REVIEW LETTERS | 1976年 / 36卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.36.1469

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1469 / 1472

页数：4

共 27 条

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[7]

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[8]

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[9]

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[10] BONDING BANDS, LONE-PAIR BANDS, AND IMPURITY STATES IN CHALCOGENIDE SEMICONDUCTORS [J].

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