HYDROGEN SENSITIVITY OF PALLADIUM-THIN-OXIDE-SILICON SCHOTTKY BARRIERS

被引：89

作者：

SHIVARAMAN, MS ^{[1
]}

LUNDSTROM, I ^{[1
]}

SVENSSON, C ^{[1
]}

HAMMARSTEN, H ^{[1
]}

机构：

[1] CHALMERS UNIV TECHNOL,RES LAB ELECTR,S-40220 GOTHENBURG 5,SWEDEN

来源：

ELECTRONICS LETTERS | 1976年 / 12卷 / 18期

关键词：

D O I：

10.1049/el:19760365

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：483 / 484

页数：2

共 9 条

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CARD, HC ;

RHODERICK, EH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) :1589-+

[2] EFFECT OF AN INTERFACIAL LAYER ON MINORITY-CARRIER INJECTION IN FORWARD-BIASED SILICON SCHOTTKY DIODES [J].

CARD, HC ;

RHODERICK, EH .

SOLID-STATE ELECTRONICS, 1973, 16 (03) :365-374

[3] MINORITY-CARRIER MIS TUNNEL-DIODES AND THEIR APPLICATION TO ELECTRON-VOLTAIC AND PHOTO-VOLTAIC ENERGY-CONVERSION .1. THEORY [J].

GREEN, MA ;

KING, FD ;

SHEWCHUN, J .

SOLID-STATE ELECTRONICS, 1974, 17 (06) :551-561

[4] HYDROGEN-SENSITIVE MOS FIELD-EFFECT TRANSISTOR [J].

LUNDSTROEM, I ;

SHIVARAMAN, S ;

SVENSSON, C ;

LUNDKVIST, L .

APPLIED PHYSICS LETTERS, 1975, 26 (02) :55-57

[5]

LUNDSTROM I, 1975, J APPL PHYS, V46, P3876

[6]

LUNDSTROM I, 1975, INT ELECTRON DEVICE

[7]

LUNDSTROM I, TO BE PUBLISHED

[8]

PECKERAR M, 1975, INT ELECTRON DEVICES, P213

[9]

SHEWCHUN J, 1974, SOLID STATE ELECT, V17, P551

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