RANGE DISTRIBUTION OF IMPLANTED IONS IN SIO2, SI3N4, AND AL2O3

被引：36

作者：

CHU, WK ^{[1
]}

CROWDER, BL ^{[1
]}

MAYER, JW ^{[1
]}

ZIEGLER, JF ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1973年 / 22卷 / 10期

关键词：

D O I：

10.1063/1.1654480

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：490 / 492

页数：3

共 13 条

[1]

BRICE DK, 1971, RADIAT EFF, V11, P227

[2] DENSITIES OF AMORPHOUS SI FILMS BY NUCLEAR BACKSCATTERING [J].

BRODSKY, MH ;

KAPLAN, D ;

ZIEGLER, JF .

APPLIED PHYSICS LETTERS, 1972, 21 (07) :305-&

[3] INFLUENCE OF AMORPHOUS PHASE ON ION DISTRIBUTIONS AND ANNEALING BEHAVIOR OF GROUP III AND GROUP V IONS IMPLANTED INTO SILICON [J].

CROWDER, BL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (06) :943-&

[4]

FURAKAWA S, 1972, P US JAPAN SEMINAR I

[5] RANGES OF NA K KR AND XE IONS IN AMORPHOUS AL2O3 IN ENERGY REGION 40-1 000 KEV [J].

JESPERSG.P ;

DAVIES, JA .

CANADIAN JOURNAL OF PHYSICS, 1967, 45 (09) :2983-&

[6]

JOHNSON WS, 1970, PROJECTED RANGE STAT

[7] CHANNELING-EFFECT ANALYSIS OF THIN FILMS ON SILICON - ALUMINUM OXIDE [J].

MITCHELL, IV ;

KAMOSHIDA, M ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4378-+

[8] MICROANALYSIS OF MATERIALS BY BACKSCATTERING SPECTROMETRY [J].

NICOLET, MA ;

MITCHELL, IV ;

MAYER, JW .

SCIENCE, 1972, 177 (4052) :841-&

[9] RANGE OF AR KR AND XE IONS IN SOLIDS IN 500-KEV TO 2-MEV ENERGY REGION [J].

POWERS, D ;

CHU, WK ;

BOURLAND, PD .

PHYSICAL REVIEW, 1968, 165 (02) :376-&

[10]

SCHIOTT HE, 1971, ION IMPLANTATION

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