LOW DIELECTRIC-CONSTANT INTERLAYER USING FLUORINE-DOPED SILICON-OXIDE

A new interlayer dielectric film using fluorine-doped silicon oxide (SiOF) for multilevel interconnection of very large scale integration (VLSI) has been fabricated. The film is deposited by a simple technique, which is hexafluoroethane (C2F6) addition to conventional tetraethoxysilane (TEOS)-based plasma-enhanced chemical vapor deposition (PE-CVD). Si-F bond formation in the him is detected by chemical bonding structural studies using Fourier transform infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS). Low dielectric constants caused by Si-F bond formation and good gap-filling ability due to in situ etching by C2F6 plasma are obtained. Therefore, SiOF film has very high applicability as an interlayer dielectric film for advanced VLSI devices.