A PHOTOLUMINESCENCE STUDY OF HYDROGENATED GAAS GROWN ON AN INP SUBSTRATE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：9

作者：

SWAMINATHAN, V ^{[1
]}

CHAKRABARTI, UK ^{[1
]}

HOBSON, WS ^{[1
]}

CARUSO, R ^{[1
]}

LOPATA, J ^{[1
]}

PEARTON, SJ ^{[1
]}

LUFTMAN, HS ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 02期

关键词：

D O I：

10.1063/1.346757

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of hydrogenation on the low-temperature (5 K) photoluminescence properties of GaAs grown on InP substrate by metalorganic chemical vapor deposition are investigated. An emission band at ∼1.4 eV originating from the GaAs/InP interfacial region shows a 30-fold increase in intensity relative to the GaAs band-edge emission after exposure to hydrogen plasma for 30 min at 250 °C. This improvement in intensity is attributed to hydrogen passivation of defects at the heterointerface caused by the large (≊4%) lattice mismatch between GaAs and InP. Annealing the hydrogenated sample at 350 °C nullifies the passivation effect. Further, the 1.4-eV band shifts to higher energy on annealing the sample in the temperature range 150-450 °C with the hydrogenated sample exhibiting a larger shift than the untreated sample. It is suggested that the annealing-induced peak shift arises due to modification of the interface and that it is greater in the hydrogenated sample compared to the untreated sample.

引用

页码：902 / 905

页数：4

共 27 条

[1] GAAS-MESFETS FABRICATED ON INP SUBSTRATES [J].