RECEIVER SENSITIVITY OF INGAAS/INP HETEROSTRUCTURE AVALANCHE PHOTO-DIODE WITH INGAASP BUFFER LAYERS AT 1.5-1.6-MU-M REGION

被引：8
作者：
MATSUSHIMA, Y
SEKI, N
AKIBA, S
NODA, Y
KUSHIRO, Y
机构：
来源：
ELECTRONICS LETTERS | 1983年 / 19卷 / 20期
关键词：
D O I：
10.1049/el:19830575
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：845 / 846
页数：2
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