SOURCES OF OXIDATION-INDUCED STACKING-FAULTS IN CZOCHRALSKI SILICON WAFERS

被引：44

作者：

ROZGONYI, GA ^{[1
]}

MAHAJAN, S ^{[1
]}

READ, MH ^{[1
]}

BRASEN, D ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 09期

关键词：

D O I：

10.1063/1.89174

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：531 / 533

页数：3

共 22 条

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PETROFF PM, 1967, J ELECTROCHEM SOC, V123, P565

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PETROFF PM, UNPUBLISHED

[17] OXIDATION-INDUCED STACKING-FAULTS IN SILICON .1. NUCLEATION PHENOMENON [J].

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VARKER, CJ .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) :263-271

[18] ELIMINATION OF OXIDATION-INDUCED STACKING-FAULTS BY PREOXIDATION GETTERING OF SILICON WAFERS .1. PHOSPHORUS DIFFUSION-INDUCED MISFIT DISLOCATIONS [J].

ROZGONYI, GA ;

PETROFF, PM ;

READ, MH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) :1725-1729

[19] ELIMINATION OF STACKING-FAULTS BY PREOXIDATION GETTERING OF SILICON WAFERS [J].

ROZGONYI, GA ;

KUSHNER, RA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (04) :570-576

[20]

ROZGONYI GA, UNPUBLISHED

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