SOURCES OF OXIDATION-INDUCED STACKING-FAULTS IN CZOCHRALSKI SILICON WAFERS

被引：44

作者：

ROZGONYI, GA ^{[1
]}

MAHAJAN, S ^{[1
]}

READ, MH ^{[1
]}

BRASEN, D ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 09期

关键词：

D O I：

10.1063/1.89174

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：531 / 533

页数：3

共 50 条

[1] SOURCES OF OXIDATION-INDUCED STACKING-FAULTS IN CZOCHRALSKI SILICON WAFERS .2. INFLUENCE OF OXYGEN-CONTENT
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (03) : C116 - C117
[2] A MODEL FOR THE FORMATION OF OXIDATION-INDUCED STACKING-FAULTS IN CZOCHRALSKI SILICON
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[3] INFLUENCE OF TRICHLOROETHYLENE ON SUPPRESSION OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON WAFERS
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[4] OXIDATION-INDUCED STACKING-FAULTS DEPENDENT ON OXYGEN CONCENTRATION IN CZOCHRALSKI-GROWN SILICON-WAFERS
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[5] MAPPING OF OXIDATION STACKING-FAULTS IN CZOCHRALSKI SILICON-WAFERS
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[6] SURFACE VERSUS BULK NUCLEATED OXIDATION-INDUCED STACKING-FAULTS IN SILICON WAFERS
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[7] SOURCES OF OXIDATION INDUCED STACKING-FAULTS IN CZOCHRALSKI SILICON WAFERS - ONE-TO-ONE CORRELATION WITH BULK DEFECTS
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[8] DENSITY OF OXIDATION-INDUCED STACKING-FAULTS IN DAMAGED SILICON
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[9] TCE OXIDATION FOR THE ELIMINATION OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON
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[10] Oxidation-induced stacking faults dependent on oxygen concentration in Czochralski-grown silicon wafers
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