SOURCES OF OXIDATION-INDUCED STACKING-FAULTS IN CZOCHRALSKI SILICON WAFERS

被引：44

作者：

ROZGONYI, GA ^{[1
]}

MAHAJAN, S ^{[1
]}

READ, MH ^{[1
]}

BRASEN, D ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 09期

关键词：

D O I：

10.1063/1.89174

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：531 / 533

页数：3

共 22 条

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VANGELDE.W .

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[6]

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[7] FORMATION AND NATURE OF SWIRL DEFECTS IN SILICON [J].

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APPLIED PHYSICS, 1975, 8 (04) :319-331

[8]

FREELAND PE, 1976, B AM PHYS SOC, V21, P229

[9] NUCLEATION AND GROWTH OF STACKING-FAULTS IN EPITAXIAL SILICON DURING THERMAL OXIDATION [J].

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[10]

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