HOT-PRESSING OF SILICON-CARBIDE WITH 1 PERCENT BORON-CARBIDE ADDITION

被引：27

作者：

BIND, JM ^{[1
]}

BIGGERS, JV ^{[1
]}

机构：

[1] PENN STATE UNIV,MAT SCI DEPT,UNIVERSITY PK,PA 16802

来源：

关键词：

D O I：

10.1111/j.1151-2916.1975.tb11482.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：304 / 306

页数：3

共 18 条

[1] PRESSURE-SINTERED SILICON CARBIDE
ALLIEGRO, RA
COFFIN, LB
TINKLEPAUGH, JR
[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1956, 39 (11) : 386 - 389
[2] ANTONOVA ND, 1962, SOVIET POWDER METAL, V6, P444
[3] PHASE TRANSFORMATIONS, HABIT CHANGES AND CRYSTAL GROWTH IN SIC
BOOTSMA, GA
KNIPPENBERG, WF
VERSPUI, G
[J]. JOURNAL OF CRYSTAL GROWTH, 1971, 8 (04) : 341 - +
[4] BRANDER RW, 1969, SILICON CARBIDE 1968, pS187
[5] DEFORMATION BEHAVIOR OF DENSE POLYCRYSTALLINE SIC
FARNSWORTH, PL
COBLE, RL
[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1966, 49 (05) : 264 - +
[6] Kieffer A., 1969, SILICON CARBIDE 1968, pS153, DOI [10.1016/b978-0%2D08-006768-1.50019%2Dx, DOI 10.1016/B978-0%2D08-006768-1.50019%2DX]
[7] KNIPPENBERG WF, 1969, SILICON CARBIDE 1968, pS33
[8] KRISHNA P, 1972, ACTA CRYSTALLOGR A, V28, pS116
[9] LANGE FF, 1973, N0001972C0278 CONTR
[10] Murray P., 1954, BRIT CERAM T, V53, P474