HOT-PRESSING OF SILICON-CARBIDE WITH 1 PERCENT BORON-CARBIDE ADDITION

被引：29

作者：

BIND, JM ^{[1
]}

BIGGERS, JV ^{[1
]}

机构：

[1] PENN STATE UNIV,MAT SCI DEPT,UNIVERSITY PK,PA 16802

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1975年 / 58卷 / 7-8期

关键词：

D O I：

10.1111/j.1151-2916.1975.tb11482.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：304 / 306

页数：3

共 18 条

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[2]

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[3] PHASE TRANSFORMATIONS, HABIT CHANGES AND CRYSTAL GROWTH IN SIC [J].

BOOTSMA, GA ;

KNIPPENBERG, WF ;

VERSPUI, G .

JOURNAL OF CRYSTAL GROWTH, 1971, 8 (04) :341-+

[4]

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[5] DEFORMATION BEHAVIOR OF DENSE POLYCRYSTALLINE SIC [J].

FARNSWORTH, PL ;

COBLE, RL .

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[6]

Kieffer A., 1969, SILICON CARBIDE 1968, pS153, DOI [10.1016/b978-0%2D08-006768-1.50019%2Dx, DOI 10.1016/B978-0%2D08-006768-1.50019%2DX]

[7]

KNIPPENBERG WF, 1969, SILICON CARBIDE 1968, pS33

[8]

KRISHNA P, 1972, ACTA CRYSTALLOGR A, V28, pS116

[9]

LANGE FF, 1973, N0001972C0278 CONTR

[10]

Murray P., 1954, BRIT CERAM T, V53, P474

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