ELASTICALLY ENHANCED NONRADIATIVE RECOMBINATION AT ALXGA1-XAS-GAAS HETERO-INTERFACE

被引：14

作者：

JOHNSTON, WD

LOGAN, RA

机构：

[1] BELL TEL LABS INC,HOLMDEL,NJ 07733

[2] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1976年 / 28卷 / 03期

关键词：

D O I：

10.1063/1.88667

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：140 / 142

页数：3

共 8 条

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[2] THRESHOLD REDUCTION BY ADDITION OF PHOSPHORUS TO TERNARY LAYERS OF DOUBLE-HETEROSTRUCTURE GAAS LASERS [J].

DYMENT, JC ;

NASH, FR ;

HWANG, CJ ;

ROZGONYI, GA ;

HARTMAN, RL ;

MARCOS, HM ;

HASZKO, SE .

APPLIED PHYSICS LETTERS, 1974, 24 (10) :481-484

[3] GAAS CONCENTRATOR SOLAR CELL [J].

JAMES, LW ;

MOON, RL .

APPLIED PHYSICS LETTERS, 1975, 26 (08) :467-470

[4] DEGRADATION CHARACTERISTICS OF CW OPTICALLY PUMPED ALXGA1-XAS HETEROSTRUCTURE LASERS [J].

JOHNSTON, WD ;

MILLER, BI .

APPLIED PHYSICS LETTERS, 1973, 23 (04) :192-194

[5] MACROSCOPIC DETERIORATION OF FLUORESCENCE FROM ALCHIGA1-CHIAS-GAAS DH MATERIAL FOLLOWING MICROSCOPIC PHYSICAL DAMAGE [J].

JOHNSTON, WD .

APPLIED PHYSICS LETTERS, 1974, 24 (10) :494-496

[6]

JOHNSTON WD, UNPUBLISHED

[7]

LOGAN RA, 1975, J QUANTUM ELECTRON, V11, P461

[8]

ROZGONYI GA, 1974, J CRYST GROWTH, V27, P106

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