PHOTOLUMINESCENCE STUDIES OF POROUS SILICON-CARBIDE

被引：136

作者：

KONSTANTINOV, AO ^{[1
]}

HENRY, A ^{[1
]}

HARRIS, CI ^{[1
]}

JANZEN, E ^{[1
]}

机构：

[1] AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 17期

关键词：

D O I：

10.1063/1.113182

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A detailed investigation of the dependence of the photoluminescence from porous silicon carbide on preparation conditions and starting material is presented. Porous silicon carbide prepared from different polytypes shows almost identical emission spectra, demonstrating a clear impedance of the band-gap energy of a particular SiC polytype. Emission bands with peak energies of 2.43, 2.22, 2.07, and 1.93 eV were resolved with the use of selective excitation by tuning the excitation wavelength. The origin of luminescence is suggested to relate to defect states produced at the etched surface.© 1995 American Institute of Physics.

引用

页码：2250 / 2252

页数：3

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