OXIDATION OF SILICON BY WATER AND OXYGEN AND DIFFUSION IN FUSED SILICA

被引：104

作者：

DOREMUS, RH ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,DEPT MAT ENGN,TROY,NY 12181

来源：

JOURNAL OF PHYSICAL CHEMISTRY | 1976年 / 80卷 / 16期

关键词：

D O I：

10.1021/j100557a006

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：1773 / 1775

页数：3

共 14 条

[1]

BREED DJ, TO BE PUBLISHED

[2] THE OXIDATION OF SILICON AT HIGH TEMPERATURES [J].

BRODSKY, MB ;

CUBICCIOTTI, D .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1951, 73 (07) :3497-3499

[3]

CRANK J, 1956, MATHEMATICS DIFFUSIO, P117

[4] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

DEAL, BE ;

GROVE, AS .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&

[5]

DOREMUS RH, 1973, GLASS SCI, P121

[6]

Doremus RH., 1969, REACT SOLID, P667

[7] OXIDATION OF SI SURFACES [J].

HAAS, GA ;

GRAY, HF .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) :3885-3887

[8] THERMAL OXIDATION OF SILICON - INSITU MEASUREMENT OF GROWTH-RATE USING ELLIPSOMETRY [J].

HOPPER, MA ;

CLARKE, RA ;

YOUNG, L .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (09) :1216-1222

[9]

KINGERY WD, 1960, PHYS CHEM GLASSES-B, V1, P87

[10]

MAJOR SD, 1975, THESIS CASE WESTERN

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