MICROWAVE NEGATIVE CONDUCTANCE OF BULK GAAS

[1] MICROWAVE OSCILLATIONS OF CURRENT IN III-V SEMICONDUCTORS [J]. SOLID STATE COMMUNICATIONS, 1963, 1 (04) : 88 - 91

[2] INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) : 141 - &

[3] MICROWAVE PHENOMENA IN BULK GAAS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 94 - +

[4] HAKKI BW, TO BE PUBLISHED

[5] TRANSFERRED ELECTRON AMPLIFIERS AND OSCILLATORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (02): : 185 - &

[6] POSSIBILITY OF NEGATIVE RESISTANCE EFFECTS IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (500): : 293 - &

[7] MICROWAVE AMPLIFICATION IN A DC-BIASED BULK SEMICONDUCTOR (N-TYPE GAAS RESISTIVITY EFFECT E-T) [J]. APPLIED PHYSICS LETTERS, 1965, 7 (06) : 167 - &

[1] MICROWAVE OSCILLATIONS OF CURRENT IN III-V SEMICONDUCTORS [J]. SOLID STATE COMMUNICATIONS, 1963, 1 (04) : 88 - 91

[2] INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) : 141 - &

[3] MICROWAVE PHENOMENA IN BULK GAAS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 94 - +

[4] HAKKI BW, TO BE PUBLISHED

[5] TRANSFERRED ELECTRON AMPLIFIERS AND OSCILLATORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (02): : 185 - &

[6] POSSIBILITY OF NEGATIVE RESISTANCE EFFECTS IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (500): : 293 - &

[7] MICROWAVE AMPLIFICATION IN A DC-BIASED BULK SEMICONDUCTOR (N-TYPE GAAS RESISTIVITY EFFECT E-T) [J]. APPLIED PHYSICS LETTERS, 1965, 7 (06) : 167 - &