ORIGIN OF THE 0.97 EV LUMINESCENCE IN IRRADIATED SILICON

被引：112

作者：

ODONNELL, KP ^{[1
]}

LEE, KM ^{[1
]}

WATKINS, GD ^{[1
]}

机构：

[1] LEHIGH UNIV,SHERMAN FAIRCHILD LAB,BETHLEHEM,PA 18015

来源：

PHYSICA B & C | 1983年 / 116卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(83)90256-5

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：258 / 263

页数：6

共 19 条

[1] ELECTRON IRRADIATION DAMAGE IN SILICON CONTAINING CARBON AND OXYGEN [J].

BEAN, AR ;

NEWMAN, RC ;

SMITH, RS .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (04) :739-&

[2]

BROWER KL, 1978, PHYS REV B, V17, P4130, DOI 10.1103/PhysRevB.17.4130

[3] EPR OF A JAHN-TELLER DISTORTED (111) CARBON INTERSTITIALLY IN IRRADIATED SILICON [J].

BROWER, KL .

PHYSICAL REVIEW B, 1974, 9 (06) :2607-2617

[4] ISOTOPE EFFECTS ON THE 969 MEV VIBRONIC BAND IN SILICON [J].

DAVIES, G ;

DOCARMO, MC .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (23) :L687-L691

[5]

DAVIES G, 1981, UNPUB

[6]

ELLIOTT KR, 1981, UNPUB

[7] UNIAXIAL-STRESS MEASUREMENTS ON THE 0.97EV LINE IN IRRADIATED SILICON [J].

FOY, CP ;

DOCARMO, MC ;

DAVIES, G ;

LIGHTOWLERS, EC .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (01) :L7-L12

[8] TEMPERATURE, STRESS, AND ANNEALING EFFECTS ON LUMINESCENCE FROM ELECTRON-IRRADIATED SILICON [J].

JONES, CE ;

JOHNSON, ES ;

COMPTON, WD ;

NOONAN, JR ;

STREETMA.BG .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (12) :5402-5410

[9]

KONOPLEV VS, 1977, IOP C SERIES, V31, P244

[10] OPTICAL-DETECTION OF MAGNETIC-RESONANCE FOR A DEEP-LEVEL DEFECT IN SILICON [J].

LEE, KM ;

ODONNELL, KP ;

WEBER, J ;

CAVENETT, BC ;

WATKINS, GD .

PHYSICAL REVIEW LETTERS, 1982, 48 (01) :37-40

← 1 2 →