ELECTRICAL DOPING OF HGCDTE BY ION-IMPLANTATION AND HEAT-TREATMENT

被引：214
作者：
DESTEFANIS, GL
机构：
[1] CEA, Grenoble, Fr, CEA, Grenoble, Fr
来源：
JOURNAL OF CRYSTAL GROWTH | 1988年 / 86卷 / 1-4期
关键词：
This work was sponsored by DRET (Ministry of Defence);
D O I：
10.1016/0022-0248(90)90798-P
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
80
引用
收藏
页码：700 / 722
页数：23
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