SILVER ON DIAMOND SCHOTTKY DIODES FORMED ON BORON DOPED HOT-FILAMENT CHEMICAL VAPOR-DEPOSITED POLYCRYSTALLINE DIAMOND FILMS

被引：21

作者：

ZHAO, G ^{[1
]}

STACY, T ^{[1
]}

CHARLSON, EJ ^{[1
]}

CHARLSON, EM ^{[1
]}

CHAO, CH ^{[1
]}

HAJSAID, M ^{[1
]}

MEESE, J ^{[1
]}

POPOVICI, G ^{[1
]}

PRELAS, M ^{[1
]}

机构：

[1] UNIV MISSOURI,DEPT NUCL ENGN,COLUMBIA,MO 65211

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 09期

关键词：

D O I：

10.1063/1.107687

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Schottky diodes were fabricated using sputter deposited silver contacts to boron doped polycrystalline diamond thin films grown by a hot-filament chemical vapor deposition process with trimethyl borate as an in situ dopant source. High forward current density and a high forward-to-reverse current ratio were exhibited by these diodes. Current density-voltage and capacitance-voltage-frequency characteristics of these diodes are very similar to those of Schottky diodes fabricated using a single-crystal diamond substrate.

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页码：1119 / 1121

页数：3

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