EFFECT OF CATHODE MATERIALS ON REACTIVE ION ETCHING OF SI AND SIO2 IN CF4

被引：0

作者：

EPHRATH, LM ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1976年 / 5卷 / 04期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：449 / 449

页数：1

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