DIFFUSION OF ARSENIC IN SILICON - VALIDITY OF THE PERCOLATION MODEL

被引：27

作者：

MATHIOT, D

PFISTER, JC

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 12期

关键词：

D O I：

10.1063/1.93836

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1043 / 1044

页数：2

共 14 条

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[4]

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[6]

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[8] ARSENIC ISOCONCENTRATION DIFFUSION STUDIES IN SILICON [J].

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[9] INFLUENCE OF THE NON-EQUILIBRIUM VACANCIES ON THE DIFFUSION OF PHOSPHORUS INTO SILICON [J].

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[10]

MATHIOT D, 1982, J PHYS LETT-PARIS, V43, pL453, DOI 10.1051/jphyslet:019820043012045300

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