CHARGE COLLECTION MECHANISMS IN MOS SOI TRANSISTORS IRRADIATED BY ENERGETIC HEAVY-IONS

被引:19
作者
MUSSEAU, O [1 ]
LERAY, JL [1 ]
FERLET, V [1 ]
UMBERT, A [1 ]
COIC, YM [1 ]
HESTO, P [1 ]
机构
[1] UNIV PARIS 11,INST ELECTR FONDAMENTALE,F-91405 ORSAY,FRANCE
关键词
D O I
10.1109/23.124097
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have investigated with both experimental and numerical methods (Monte Carlo and drift-diffusion models) various charge collection mechanisms in NMOS/SOI transistors irradiated by single energetic heavy ions. Our physical interpretations of data emphasize the influence of various parasitic structures of the device. Two charge collection mechanisms are detailed: substrate funneling in buried MOS capacitor and latching of the parasitic bipolar transistor.
引用
收藏
页码:1226 / 1233
页数:8
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