STRAIN-INDUCED METAL-INSULATOR-TRANSITION OF THE GE(111) SURFACE

被引：10
作者：
MILLER, T [1 ]
HSIEH, TC [1 ]
JOHN, P [1 ]
SHAPIRO, AP [1 ]
WACHS, AL [1 ]
CHIANG, TC [1 ]
机构：
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
来源：
PHYSICAL REVIEW B | 1986年 / 33卷 / 06期
关键词：
D O I：
10.1103/PhysRevB.33.4421
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：4421 / 4423
页数：3
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